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?2009 fairchild semiconductor corporation fqp8n80c/fqpf8n80c/fqpf8n80cydtu rev.a 1 www.fairchildsemi.com fqp8n80c/fqpf8n80c /fqpf8n80cydtu 800v n-channel mosfet fqp8n80c/fqpf8n80c/fqpf8n80cydtu 800v n-channel mosfet general description these n-channel enhancement mode power field effect transistors are produced using fairchild?s proprietary, planar stripe, dmos technology. this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high efficiency switch mode power supplies. features 8a, 800v, r ds(on) = 1.55 ? @v gs = 10 v low gate charge ( typical 35 nc) low crss ( typical 13 pf) fast switching 100% avalanche tested improved dv/dt capability absolute maximum ratings t c = 25c unless otherwise noted * drain current limited by maximum junction temperature. thermal characteristics symbol parameter fqp8n80c fqpf8n80c units v dss drain-source voltage 800 v i d drain current - continuous (t c = 25c) 88 *a - continuous (t c = 100c) 5.1 5.1 * a i dm drain current - pulsed (note 1) 32 32 * a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 850 mj i ar avalanche current (note 1) 8a e ar repetitive avalanche energy (note 1) 17.8 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25c) 178 59 w - derate above 25c 1.43 0.48 w/c t j , t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purposes, 1/8 " from case for 5 seconds 300 c symbol parameter fqp8n80c fqpf8n80c units r jc thermal resistance, junction-to-case 0.7 2.1 c / w r js thermal resistance, case-to-sink typ. 0.5 -- c / w r ja thermal resistance, junction-to-ambient 62.5 62.5 c / w to-220 fqp series g s d to-220f fqpf series g s d ! ! ! ! ! ! ! ! ! ! ! ! ? ? ? ? ! ! ! ! ! ! ! ! ! ! ! ! ? ? ? ? s d g qfet tm january 2009 ? r ohs c ompliant
www.fairchildsemi.com fqp8n80c/fqpf8n80c /fqpf8n80cydtu 800v n-channel mosfet fqp8n80c/fqpf8n80c/fqpf8n80cydtu rev.a 2 electrical characteristics t c = 25c unless otherwise noted notes: 1. repetitive rating : pulse width limited by maximum junction temperature 2. l = 25mh, i as = 8a, v dd = 50v, r g = 25 ?, starting t j = 25c 3. i sd 8a, di/dt 200a/ s, v dd bv dss, starting t j = 25c 4. pulse test : pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature symbol parameter test conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 800 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25c -- 0.5 -- v/c i dss zero gate voltage drain current v ds = 800 v, v gs = 0 v -- -- 10 a v ds = 640 v, t c = 125c -- -- 100 a i gssf gate-body leakage current, forward v gs = 30 v, v ds = 0 v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30 v, v ds = 0 v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3.0 -- 5.0 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 4 a -- 1.29 1.55 ? g fs forward transconductance v ds = 50 v, i d = 4 a (note 4) -- 5.6 -- s dynamic characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 1580 2050 pf c oss output capacitance -- 135 175 pf c rss reverse transfer capacitance -- 13 17 pf switching characteristics t d(on) turn-on delay time v dd = 400 v, i d = 8 a, r g = 25 ? (note 4, 5) -- 40 90 ns t r turn-on rise time -- 110 230 ns t d(off) turn-off delay time -- 65 140 ns t f turn-off fall time -- 70 150 ns q g total gate charge v ds = 640 v, i d = 8 a, v gs = 10 v (note 4, 5) -- 35 45 nc q gs gate-source charge -- 10 -- nc q gd gate-drain charge -- 14 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 8 a i sm maximum pulsed drain-source diode forward current -- -- 32 a v sd drain-source diode forward voltage v gs = 0 v, i s = 8 a -- -- 1.4 v t rr reverse recovery time v gs = 0 v, i s = 8 a, di f / dt = 100 a/ s (note 4) -- 690 -- ns q rr reverse recovery charge -- 8.2 -- c
www.fairchildsemi.com fqp8n80c/fqpf8n80c/fqpf8n80cydtu rev.a 3 fqp8n80c/fqpf8n80c /fqpf8n80cydtu 800v n-channel mosfet 048121620 1.0 1.5 2.0 2.5 3.0 v gs = 20v v gs = 10v note : t j = 25 r ds(on) [ ], drain-source on-resistance i d , drain current [a] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 -1 10 0 10 1 150 notes : 1. v gs = 0v 2. 250 s pulse test 25 i dr , reverse drain current [a] v sd , source-drain voltage [v] 10 -1 10 0 10 1 10 -1 10 0 10 1 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v bottom : 5.5 v notes : 1. 250 s pulse test 2. t c = 25 i d , drain current [a] v ds , drain-source voltage [v] 246810 10 -1 10 0 10 1 150 o c 25 o c -55 o c notes : 1. v ds = 50v 2. 250 s pulse test i d , drain current [a] v gs , gate-source voltage [v] typical characteristics figure 5. capacitance characteristics figure 6. gate charge characteristics figure 3. on-resistance variation vs drain current and gate voltage figure 2. transfer characteristics figure 1. on-region characteristics 10 -1 10 0 10 1 0 500 1000 1500 2000 2500 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes : 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v] 010203040 0 2 4 6 8 10 12 v ds = 400v v ds = 160v v ds = 640v note : i d = 8a v gs , gate-source voltage [v] q g , total gate charge [nc] figure 4. body diode forward voltage variation with source current and temperature
www.fairchildsemi.com fqp8n80c/fqpf8n80c /fqpf8n80cydtu 800v n-channel mosfet fqp8n80c/fqpf8n80c/fqpf8n80cydtu rev.a 4 typical characteristics (continued) figure 9-1. maximum safe operating area for fqp8n80c figure 10. maximum drain current vs case temperature figure 9-2. maximum safe operating area for fqpf8n80c 25 50 75 100 125 150 0 2 4 6 8 10 i d , drain current [a] t c , case temperature [ ] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes : 1. v gs = 10 v 2. i d = 4.0 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 10 s dc 10 ms 1 ms 100 s operation in this area is limited by r ds(on) notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 10 s dc 10 ms 1 ms 100 s operation in this area is limited by r ds(on) notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] figure 7. breakdown voltage variation vs temperature figure 8. on-resistance variation vs temperature
www.fairchildsemi.com fqp8n80c/fqpf8n80c /fqpf8n80cydtu 800v n-channel mosfet fqp8n80c/fqpf8n80c/fqpf8n80cydtu rev.a 5 typical characteristics (continued) figure 11-1. transient thermal response curve for fqp8n80c figure 11-2. transient thermal response curve for fqpf8n80c 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 notes : 1 . z jc (t) = 0.7 /w m a x. 2 . d uty f a ctor, d = t 1 /t 2 3 . t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square w ave pulse duration [sec] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 notes : 1. z jc (t) = 2.1 /w m ax. 2. d uty factor, d =t 1 /t 2 3. t jm - t c = p dm * z jc (t) sin gle pu lse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), t herm al r esponse t 1 , square w ave pulse duration [sec]
f qp8n80c/fqpf8n80c/fqpf8n80cydtu 800v n-channel mosfet fqp8n80c/fqpf8n80c/fqpf8n80cydtu rev. a www.fairchildsemi.com 5 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
f qp8n80c/fqpf8n80c/fqpf8n80cydtu 800v n-channel mosfet fqp8n80c/fqpf8n80c/fqpf8n80cydtu rev. a www.fairchildsemi.com 6 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g sam e type as d u t v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( d riv e r ) i sd ( d u t ) v ds ( dut ) v dd b ody d iode forw ard volta g e d ro p v sd i fm , b ody d iode forw ard c urrent b ody d iode r everse c urrent i rm b ody d iode r ecovery dv/dt di/dt d = g ate p ulse w idth g ate pulse period -------------------------- dut v ds + _ driver r g sam e type as d u t v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( d riv e r ) i sd ( d u t ) v ds ( dut ) v dd b ody d iode forw ard volta g e d ro p v sd i fm , b ody d iode forw ard c urrent b ody d iode r everse c urrent i rm b ody d iode r ecovery dv/dt di/dt d = g ate p ulse w idth g ate pulse period -------------------------- d = g ate p ulse w idth g ate pulse period --------------------------
fdb037n06 n-channel powertrench ? mosfet fqp8n80c/fqpf8n80c/fqpf8n80cydtu rev. a www.fairchildsemi.com 7 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g sam e type as d u t v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( d riv e r ) i sd ( d u t ) v ds ( dut ) v dd b ody d iode forw ard volta g e d ro p v sd i fm , b ody d iode forw ard c urrent b ody d iode r everse c urrent i rm b ody d iode r ecovery dv/dt di/dt d = g ate p ulse w idth g ate pulse period -------------------------- dut v ds + _ driver r g sam e type as d u t v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( d riv e r ) i sd ( d u t ) v ds ( dut ) v dd b ody d iode forw ard volta g e d ro p v sd i fm , b ody d iode forw ard c urrent b ody d iode r everse c urrent i rm b ody d iode r ecovery dv/dt di/dt d = g ate p ulse w idth g ate pulse period -------------------------- d = g ate p ulse w idth g ate pulse period --------------------------
www.fairchildsemi.com fqp8n80c/fqpf8n80c fqpf8n80cydtu 800v n-channel mosfet fqp8n80c/fqpf8n80c/fqpf8n80cydtu rev.a 8 package dimensions 4.50 0.20 9.90 0.20 1.52 0.10 0.80 0.10 2.40 0.20 10.00 0.20 1.27 0.10 ?.60 0.10 (8.70) 2.80 0.10 15.90 0.20 10.08 0.30 18.95max. (1.70) (3.70) (3.00) (1.46) (1.00) (45 ) 9.20 0.20 13.08 0.20 1.30 0.10 1.30 +0.10 ?.05 0.50 +0.10 ?.05 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] to-220 dimensions in millimeters
www.fairchildsemi.com fqp8n80c/fqpf8n80c /fqpf8n80cydtu 800v n-channel mosfet fqp8n80c/fqpf8n80c/fqpf8n80cydtu rev.a 9 package dimensions (continued) (7.00) (0.70) max1.47 (30 ) #1 3.30 0.10 15.80 0.20 15.87 0.20 6.68 0.20 9.75 0.30 4.70 0.20 10.16 0.20 (1.00x45 ) 2.54 0.20 0.80 0.10 9.40 0.20 2.76 0.20 0.35 0.10 ? 3.18 0.10 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] 0.50 +0.10 e 0.05 to-220f dimensions in millimeters
fqf8n80c/fqpf8n80c/fqpf8n80cydtu 800v n-channel mosfet www.fairchildsemi.com 10 fqp8n80c/fqpf8n80c/fqpf8n80cydtu rev.a
f qp8n80c/fqpf8n80c/fqpf8n80cydtu 800v n-channel mosfet fqp8n80c/fqpf8n8 0c/fqpf8n80cydtu rev. a www.fairch ildsemi.com 1 1 rev. i37 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. * ezswitch? and flashwriter ? are trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairch ild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized fo r use as critical components in life support devices or systems without the express written approval of fa irchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms build it now? coreplus? corepower? crossvolt ? ctl? current transfer logic? ecospark ? efficentmax? ezswitch? * ? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? flashwriter ? * fps? f-pfs? frfet ? global power resource sm green fps? green fps? e-series? gto? intellimax? isoplanar? megabuck? microcoupler? microfet? micropak? millerdrive? motionmax? motion-spm? optologic ? optoplanar ? ? pdp spm? power-spm? powertrench ? powerxs? programmable active droop? qfet ? qs? quiet series? rapidconfigure? ? saving our world, 1mw /w /kw at a time? smartmax? smart start? spm ? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 supremos? syncfet? ? the power franchise ? tinyboost? tinybuck? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? serdes? uhc ? ultra frfet? unifet? vcx? visualmax? xs? tm ? tm tm datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fair child semiconductor reserves the right to make changes at any time withou t notice to improve the design. obsolete not in production datasheet contains specifications on a product th at is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeiting policy fairchild semiconductor corporation?s anti-counterfeiting policy. farichild?s anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in th e industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of production and manufacturing del ays. fairchild is taking strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. farichild strongly encourages customers to purchase farichild parts either directly from fa irchild or from authorized fairchild distributors who are listed by country on our web page cited above. products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fairchild?s quality standards for handing and storage and provide access to farichild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unau thorized sources. farichild is committed to combat this global problem and encourage our customer s to do their part in stopping this practice by buying direct or from authorized distributors.

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